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Samsung V-NAND SSD 970 EVO PLUS NVME M.2
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Model Code (Capacity) |
MZ-V7S250 (250GB) |
MZ-V7S500 (500GB) | MZ-V7S1T0 (1TB) |
|
General Feature |
APPLICATION |
FORM FACTOR | INTERFACE |
| Client PCs | M.2 (2280) | PCIe Gen 3.0 x4, NVMe 1.3 | |
| DIMENSION (WxHxD) | WEIGHT | STORAGE MEMORY | |
| Max. 80.15 x 22.15 x 2.38 (mm) | Max 8.0 g | Samsung V-NAND 3-bit MLC | |
|
Special Feature |
TRIM SUPPORT |
S.M.A.R.T SUPPORT | GC (GARBAGE COLLECTION) |
| Yes | Yes | Auto Garbage Collection Algorithm | |
| ENCRYPTION SUPPORT | WWN SUPPORT | DEVICE SLEEP MODE SUPPORT | |
| AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive) | Not Supported | Yes | |
|
Performance |
SEQUENTIAL READ |
SEQUENTIAL WRITE 250GB: Up to 2,300 MB/s 500GB: Up to 3,200 MB/s 1TB: Up to 3,300 MB/s 2TB: Up to 3,300 MB/s |
RANDOM READ (4KB, QD32) 250GB: Up to 250,000 IOPS 500GB: Up to 480,000 IOPS 1TB: Up to 600,000 IOPS 2TB: Up to 620,000 IOPS |
| RANDOM WRITE (4KB, QD32) 250GB: Up to 550,000 IOPS 500GB: Up to 550,000 IOPS 1TB: Up to 550,000 IOPS 2TB: Up to 560,000 IOPS |
RANDOM READ (4KB, QD1) 250GB: Up to 17,000 IOPS 500GB: Up to 19,000 IOPS 1TB: Up to 19,000 IOPS 2TB: Up to 19,000 IOPS |
RANDOM WRITE (4KB, QD1) 250GB: Up to 60,000 IOPS 500GB: Up to 60,000 IOPS 1TB: Up to 60,000 IOPS 2TB: Up to 62,000 IOPS |
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Environment |
AVERAGE POWER CONSUMPTION (SYSTEM LEVEL) |
POWER CONSUMPTION (IDLE) | POWER CONSUMPTION (DEVICE SLEEP) |
| 250GB: Average 5.0 W 500GB: Average 5.8 W 1TB: Average 6.0 W 2TB: Average 6.0 W |
Max. 30 mW | Max. 5 mW | |
| ALLOWABLE VOLTAGE | RELIABILITY (MTBF) | OPERATING TEMPERATURE | |
| 3.3 V ± 5 % Allowable voltage | 1.5 Million Hours Reliability | 0 - 70 ℃ | |
| SHOCK | |||
| 1,500 G & 0.5 ms (Half sine) | |||
|
Warranty |
1 Year | 1 Year | 1 Year |